珠海超星半导体有限公司

Chip Failure Analysis (FA) is a critical discipline for ensuring product reliability and improving yield. Faced with challenges like functional failure, short circuits, leakage, or batch failures, HyperSemi delivers comprehensive root-cause analysis solutions. Leveraging a systematic approach, state-of-the-art equipment, and a team of seasoned experts, we help clients pinpoint design flaws, process issues, and application faults, enabling rapid problem closure and product enhancement.

Core Capabilities

We offer full-spectrum failure analysis services covering the entire chip lifecycle, including:

• Electrical Characterization: ATE testing, probe station measurement, I-V curve analysis

• Non-Destructive Analysis (NDA): 2D/3D X-Ray/CT imaging, infrared thermal imaging, Scanning Acoustic Microscopy (SAM)

• Destructive Physical Analysis (DPA): Chemical/laser decapsulation, FIB/SEM cross-sectioning, EDS elemental analysis

• Circuit-Level Fault Localization: Emission Microscopy (EMMI), Optical Beam Induced Resistance Change (OBIRCH), E-beam probing

• Material & Surface Analysis: SIMS, XPS, AFM for surface and compositional characterization

Standardized FA Workflow

We adhere to a systematic "outside-in, non-destructive first" methodology:

1. Failure Replication & Electrical Isolation
   Based on failure background and ATE testing, we replicate the fault, identify abnormal electrical parameters, and narrow down the failure zone.

2. Non-Destructive Internal Inspection
   Using X-Ray CT, thermal imaging, SAM, and other techniques, we inspect internal package structure, thermal distribution, and interface defects without causing damage.

3. Microscopic Physical & Material Analysis
   We perform precise decapsulation and FIB cross-sectioning, utilize SEM/TEM to observe nanoscale defects, and employ EDS/SIMS for contamination and compositional analysis.

4. Circuit & Device-Level Precision Localization
   Advanced techniques like EMMI and OBIRCH are applied to pinpoint faults such as leakage, shorts, or opens at the transistor or circuit node level.

5. Root-Cause Diagnosis & Improvement Recommendations
   Correlating electrical, physical, and material data, we construct failure mechanism models (e.g., electromigration, HCI, ESD damage) and provide actionable improvements for design, process, or application.

Technical Strengths & Advantages

• Advanced Equipment Platform: Features Dual-Beam FIB, high-resolution SEM, 3D X-Ray, fully automated probe stations, and more.

• Cross-Node & Packaging Expertise: Extensive experience spanning mature nodes to advanced packaging (Flip-Chip, SiP, Fan-Out).

• Expert Engineering Team: Projects are led by senior engineers with backgrounds in semiconductor physics, device engineering, and materials science.

• Standardized & Reliable Process: Implements strict data correlation and sample protection protocols to ensure accurate, dependable results.

Typical Application Scenarios

• R&D Phase: Functional anomalies, parametric shifts, reliability test failures

• Production & Packaging: Solder ball voids, wire bond fractures, delamination, contamination-related failures

• Field Returns & Application Issues: Overvoltage/overcurrent damage, ESD/EOS events, thermal fatigue failures

• Reliability Enhancement: Early failure analysis and mechanism study for HTOL, ELFR, and other reliability tests

Why Choose HyperSemi?

We are committed to transforming failure analysis into a key driver of product competitiveness. Through precise fault localization, rapid response, and in-depth diagnostics, we help clients shorten development cycles, improve yield, and reduce field failure rates, safeguarding quality throughout the chip's lifecycle.

To learn more or discuss collaboration, please contact us via our website at www.hypersermi.com.cn.

Keywords: Chip Failure Analysis, Yield Improvement, Reliability Testing, Fault Isolation, EMMI, FIB, SEM, X-Ray CT, Decapsulation, Cross-Section Analysis, ESD Damage, Electromigration, Package Failure, Root Cause Analysis.