HSC99N12TFI8
Mfr:Hypersemi
Category:IGBT wafer
VCES(V):1200V
IC(A):100A
VCES(sat)(V):1.65V
VGEth(V):5.8V
MOQ:1
Size(mm):10.39*9.5mm
Product overview
HSC99N12TFI8-IGBT wafer, VCES: 1200V, IC: 100A, VCEsat: 1.65V. Datasheet & samples available — contact us for price & lead time.
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