HSC50N12TFI8-IGBT wafer-1200V-50A-1.9V

Home Products Wafer IGBT wafer

HSC50N12TFI8

Mfr：Hypersemi

Category：IGBT wafer

VCES(V)：1200V

IC(A)：50A

VCES(sat)(V)：1.9V

VGEth(V)：5.8V

MOQ：1

Size(mm)：7.25*6.84mm

Save to list Quick Enquiry Datasheet Request sample

Product overview

HSC50N12TFI8-IGBT wafer, VCES: 1200V, IC: 50A, VCEsat: 1.9V, VGEth: 5.8V, MOQ: 1. Datasheet & samples available — contact us for price & lead time.

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