HSC49N12TFI8H
Mfr:Hypersemi
Category:IGBT wafer
VCES(V):1200V
IC(A):50A
VCES(sat)(V):2.19V
VGEth(V):5.8V
MOQ:1
Size(mm):7.21*6.82mm
Product overview
HSC49N12TFI8H-IGBT wafer, VCES: 1200V, IC: 50A, VCEsat: 2.19V, VGEth: 5.8V, MOQ: 1. Datasheet & samples available — contact us for price & lead time.
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