HSC43N12TFI8H_D
Mfr:Hypersemi
Category:IGBT wafer
VCES(V):1200V
IC(A):40A
VCES(sat)(V):1.9V
VGEth(V):5V
MOQ:1
Size(mm):6.65*6.48mm
Product overview
HSC43N12TFI8H_D-IGBT wafer, VCES: 1200V, IC: 40A, VCEsat: 1.9V. Datasheet & samples available — contact us for price & lead time.
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