HSC35N17TFI8
Mfr:Hypersemi
Category:IGBT wafer
VCES(V):1700V
IC(A):20A
VCES(sat)(V):1.6V
VGEth(V):5.85V
MOQ:
Size(mm):6.46*5.56mm
Product overview
HSC35N17TFI8-IGBT wafer, VCES: 1700V, IC: 20A, VCEsat: 1.6V. Datasheet & samples available — contact us for price & lead time.
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