HSC193N12TFI8-IGBT wafer-1200V-200A

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HSC193N12TFI8

Mfr：Hypersemi

Category：IGBT wafer

VCES(V)：1200V

IC(A)：200A

VCES(sat)(V)：1.75V

VGEth(V)：5.8V

MOQ：

Size(mm)：15.98*12.07mm

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Product overview

HSC193N12TFI8-IGBT wafer, VCES: 1200V, IC: 200A, VCEsat: 1.75V. Datasheet & samples available — contact us for price & lead time.

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