HSC191N12I12LA
Mfr:Hypersemi
Category:IGBT wafer
VCES(V):1200V
IC(A):225A
VCES(sat)(V):1.75V
VGEth(V):5.9V
MOQ:1
Size(mm):13.93*13.70mm
Product overview
HSC191N12I12LA-IGBT wafer, VCES: 1200V, IC: 225A, VCEsat: 1.75V, VGEth: 5.9V, MOQ: 1. Datasheet & samples available — contact us for price & lead time.
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