HSC18N12TFI8_C
Mfr:Hypersemi
Category:IGBT wafer
VCES(V):1200V
IC(A):15A
VCES(sat)(V):1.8V
VGEth(V):5.8V
MOQ:1
Size(mm):4.20*4.20mm
Product overview
HSC18N12TFI8_C-IGBT wafer, VCES: 1200V, IC: 15A, VCEsat: 1.8V, VGEth: 5.8V, MOQ: 1. Datasheet & samples available — contact us for price & lead time.
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