HSC186N17TFI8-IGBT wafer-1700V-150A

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HSC186N17TFI8

Mfr：Hypersemi

Category：IGBT wafer

VCES(V)：1700V

IC(A)：150A

VCES(sat)(V)：2V

VGEth(V)：5.6V

MOQ：

Size(mm)：14.77*12.58mm

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Product overview

HSC186N17TFI8-IGBT wafer, VCES: 1700V, IC: 150A, VCEsat: 2V. Datasheet & samples available — contact us for price & lead time.

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