HSC168N17TFI8
Mfr:Hypersemi
Category:IGBT wafer
VCES(V):1700V
IC(A):120A
VCES(sat)(V):2.1V
VGEth(V):5.7V
MOQ:1
Size(mm):13.38*12.58mm
Product overview
HSC168N17TFI8-IGBT wafer, VCES: 1700V, IC: 120A, VCEsat: 2.1V, VGEth: 5.7V, MOQ: 1. Datasheet & samples available — contact us for price & lead time.
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