HSC131N12I8HB-IGBT wafer-1200V-150A

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HSC131N12I8HB

Mfr：Hypersemi

Category：IGBT wafer

VCES(V)：1200V

IC(A)：150A

VCES(sat)(V)：2.2V

VGEth(V)：6.1V

MOQ：

Size(mm)：11.78*11.18mm

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Product overview

HSC131N12I8HB-IGBT wafer, VCES: 1200V, IC: 150A, VCEsat: 2.2V. Datasheet & samples available — contact us for price & lead time.

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