珠海超星半导体有限公司

*Overcoming High-Temperature Derating and Low-Light Loss Challenges in 15kW Systems*

IGBTs in PV Inverters: Primarily used in DC/DC boost converter and DC/AC inverter circuits. IGBT (Insulated Gate Bipolar Transistor) is a composite fully-controlled voltage-driven power semiconductor device integrating BJT (Bipolar Junction Transistor) and MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It combines the high input impedance of MOSFET with the low on-state voltage drop of GTR (Giant Transistor). This enables precise regulation of voltage, current, frequency, and phase in industrial systems based on control signals.

Single-Phase String Inverters typically feature rated power <15kW. Classified by grid connection:

• 220V single-phase string inverters

• 380V three-phase string inverters

Residential PV systems predominantly adopt single-phase string inverters.

I. Industry Technical Analysis

1. High-Temperature Derating Losses

• Conventional IGBTs require 40% derating when heatsink temperature >85°C → PV array utilization <70% (empirical data)

• Thermal systems account for 35% of total weight, increasing installation costs

2. Low-Light Efficiency Collapse

• At irradiance <400W/m², IGBT conduction losses exceed 50% of total losses (VCE(sat)≥2V)

3. High-Current Switching Stress

• 15kW systems experience >60A peak currents → Switching losses induce thermal runaway risks

II. Core Technological Breakthroughs of HG75T65LX100

✅175℃ Junction Temperature: Engineering Value Analysis

System Advantages:

✅ Full-Power Operation at High Ambient Temperatures

• Maintains 15kW continuous output at 50°C ambient (zero derating required)

• 60% smaller heatsink → Achieves ≤85°C baseplate temperature with natural convection

✅ Deeply Optimized Conduction Losses

• Ultra-low VCE(sat)=1.8V@75A (Trench Field-Stop technology)

• Merely 0.288W loss under low-light conditions (IC<=15A):

Math  Pcon=IC×VCE(sat)= 15A×0.0192V = 0.288W

• Daily generation gain: +2.3kWh at 300W/m² irradiance (efficiency 98.1%→98.7%)

✅ Enhanced Dynamic Performance & Reliability

• Integrated fast recovery diode (VF=1.4V @175°C) → 18% higher freewheeling efficiency

• 300A pulse current capability (handles string PID recovery surges)

• Supports 16kHz switching frequency (reduces inductor volume by 30%)

HG75T65LX100 is an N-channel trench gate cut-off IGBT that uses Trench Field stop technology and optimized processes to achieve very low VCEsat saturation drop and a good trade-off between conduction loss and shutdown loss (Eoff).

This IGBT discrete device is widely adopted in:

• Single-phase string PV inverters

• High-frequency automotive sine-wave AC220V inverters

• Solar inverters

• Portable power stations

• UPS systems

• Variable frequency drives (VFDs)

• Welding equipment

• Industrial sewing machines

Compatible Replacement: Drop-in substitute for FGH60N60SM_F085