HSC92N10I12UA
Mfr:Hypersemi
Category:IGBT wafer
VCES(V):950V
IC(A):200A
VCES(sat)(V):1.7V
VGEth(V):4.8V
MOQ:1
Size(mm):9.58*9.58mm
Product overview
HSC92N10I12UA-IGBT wafer, VCES: 950V, IC: 200A, VCEsat: 1.7V, VGEth: 4.8V, MOQ: 1. Datasheet & samples available — contact us for price & lead time.
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